skip to main content

SciTech ConnectSciTech Connect

Title: Critical size for the generation of misfit dislocations and their effects on electronic properties in GaAs nanosheets on Si substrate

While nanowires and nanosheets (NSs) grown on lattice-mismatched substrates have a number of promising technological applications such as solar cells, generation of misfit dislocations (MFDs) at their interfaces is a major concern for the efficiency of these devices. Here, combined molecular-dynamics and quantum-mechanical simulations are used to study MFDs at the interface between a GaAs NS and a Si substrate. Simulation results show the existence of a critical NS thickness, below which NSs are grown free of MFDs. The calculated critical thickness value is consistent with available experimental observations. Charge transfer at the MFD core is found to modify the electronic band profile at the GaAs/Si interface significantly. These effects should have profound impacts on the efficiency of lattice-mismatched NS devices.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [3] ;  [1] ;  [3] ;  [1]
  1. Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242 (United States)
  2. (United States)
  3. (Japan)
Publication Date:
OSTI Identifier:
22218160
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 7; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CRITICAL SIZE; DISLOCATIONS; EFFICIENCY; EQUIPMENT; GALLIUM ARSENIDES; INTERFACES; MOLECULAR DYNAMICS METHOD; QUANTUM MECHANICS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SHEETS; SIMULATION; SUBSTRATES; THICKNESS