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Title: Strain-induced modification in the magnetic properties of Mn{sub 5}Ge{sub 3} thin films

Epitaxial ferromagnetic Mn{sub 5}Ge{sub 3} thin films were stabilized on GaSb(001) and GaAs(001) substrates using molecular beam epitaxy. Compared to bulk Mn{sub 5}Ge{sub 3} materials, an enhancement of the Curie temperature above 350 K and about 320 K was observed for Mn{sub 5}Ge{sub 3}/GaAs(001) and Mn{sub 5}Ge{sub 3}/GaSb(001) heterostructures, respectively. The magnetization was found to decrease from 323 to 245 emu/cm{sup 3} for films grown on GaSb(001) and GaAs(001). Anomalous Hall effect measurements provide evidence of the strain-induced large spin polarization from density-functional study. Furthermore, our calculated results in bulk Mn{sub 5}Ge{sub 3} under strain indicate that the strain is the origin of different physical properties of Mn{sub 5}Ge{sub 3} grown on different substrates.
Authors:
 [1] ;  [2] ; ; ;  [1] ;  [3]
  1. Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of)
  2. (Viet Nam)
  3. Aix Marseille Université, CNRS, CINaM-UMR 7325, 13288 Marseille (France)
Publication Date:
OSTI Identifier:
22218157
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 7; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPARATIVE EVALUATIONS; CURIE POINT; DENSITY FUNCTIONAL METHOD; FERROMAGNETIC MATERIALS; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; GERMANIUM ALLOYS; HALL EFFECT; MAGNETIC PROPERTIES; MAGNETIZATION; MANGANESE ALLOYS; MODIFICATIONS; MOLECULAR BEAM EPITAXY; SPIN ORIENTATION; STRAINS; SUBSTRATES; THIN FILMS