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Title: Microwave assisted growth of copper germanide thin films at very low temperatures

Herein the synthesis of Cu{sub 3}Ge films by exposing Cu-Ge alloy films to microwave radiation is reported. It is shown that microwave radiation led to the formation of copper germanide at temperatures ca. 80 °C. The electrical properties of the Cu{sub 3}Ge films are presented and compared for various annealing times. X-ray diffraction shows that the Cu{sub 3}Ge films formed after microwave annealing is crystalline in the orthorhombic phase. Rutherford backscattering and X-ray photoelectron spectroscopy confirms the formation of copper oxide encapsulation layer. Despite the slight oxidation of Cu during the microwave anneal the lowest resistivity of Cu{sub 3}Ge films obtained is 14 μΩ-cm.
Authors:
 [1] ;  [2]
  1. Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287 (United States)
  2. School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287 (United States)
Publication Date:
OSTI Identifier:
22218148
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 9; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; ANNEALING; COMPARATIVE EVALUATIONS; COPPER OXIDES; DEPOSITION; ELECTRIC CONDUCTIVITY; ENCAPSULATION; GERMANIDES; LAYERS; MICROWAVE RADIATION; ORTHORHOMBIC LATTICES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPUTTERING; TEMPERATURE RANGE 0013-0065 K; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY