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Title: Defects in {sup 6}LiInSe{sub 2} neutron detector investigated by photo-induced current transient spectroscopy and photoluminescence

{sup 6}LiInSe{sub 2} is a promising thermal neutron semiconductor detector material. The performance of the detector is affected by the carrier mobility-lifetime products. Therefore, defects that function as carrier recombination centers need to be identified. In this letter, characterization of defect levels in {sup 6}LiInSe{sub 2} by photo-induced current transient spectroscopy (PICTS) and photoluminescence is reported. PICTS measurements revealed electron-related defects located at 0.22, 0.36, and 0.55 eV and hole-related defects at 0.19, 0.30, and 0.73 eV. Free exciton and donor-acceptor pairs (DAP) emissions were observed. The PICTS defect level values are consistent with those extracted from DAP transitions.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [3] ;  [1] ;  [4]
  1. Department of Life and Physical Sciences, Fisk University, Nashville, Tennessee 37208 (United States)
  2. SEMETROL, 13312 Shore Lake Turn, Chesterfield, Virginia 23838 (United States)
  3. Y-12 National Security Complex, Oak Ridge, Tennessee 37830 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22218145
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 9; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CARRIER LIFETIME; CARRIER MOBILITY; CARRIERS; CRYSTAL DEFECTS; EV RANGE; LITHIUM COMPOUNDS; NEUTRON DETECTORS; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; THERMAL NEUTRONS; TRANSIENTS