Defects in {sup 6}LiInSe{sub 2} neutron detector investigated by photo-induced current transient spectroscopy and photoluminescence

Journal Article · Mon Aug 26 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4819733· OSTI ID:22218145

Cui, Yunlong; Bhattacharya, Pijush; Buliga, Vladimir; Tupitsyn, Eugene; Rowe, Emmanuel; Wiggins, Brenden ^[1]; Johnstone, Daniel ^[2]; Stowe, Ashley ^[3]; Burger, Arnold ^[1]

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1. Department of Life and Physical Sciences, Fisk University, Nashville, Tennessee 37208 (United States)
2. SEMETROL, 13312 Shore Lake Turn, Chesterfield, Virginia 23838 (United States)
3. Y-12 National Security Complex, Oak Ridge, Tennessee 37830 (United States)

{sup 6}LiInSe{sub 2} is a promising thermal neutron semiconductor detector material. The performance of the detector is affected by the carrier mobility-lifetime products. Therefore, defects that function as carrier recombination centers need to be identified. In this letter, characterization of defect levels in {sup 6}LiInSe{sub 2} by photo-induced current transient spectroscopy (PICTS) and photoluminescence is reported. PICTS measurements revealed electron-related defects located at 0.22, 0.36, and 0.55 eV and hole-related defects at 0.19, 0.30, and 0.73 eV. Free exciton and donor-acceptor pairs (DAP) emissions were observed. The PICTS defect level values are consistent with those extracted from DAP transitions.

• OSTI ID: 22218145
• Journal Information: Applied Physics Letters, Vol. 103, Issue 9; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CARRIER LIFETIME
CARRIER MOBILITY
CARRIERS
CRYSTAL DEFECTS
EV RANGE
LITHIUM COMPOUNDS
NEUTRON DETECTORS
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
THERMAL NEUTRONS
TRANSIENTS