Electrical characterization of ensemble of GaN nanowires grown by the molecular beam epitaxy technique
- Technische Universität Dresden, 01062 Dresden (Germany)
- Institute of Physics Polish Academy of Sciences, Al. Lotnikow 32-46, 02-668 Warsaw (Poland)
High quality Schottky contacts are formed on GaN nanowires (NWs) structures grown by the molecular beam epitaxy technique on Si(111) substrate. The current-voltage characteristics show the rectification ratio of about 10{sup 3} and the leakage current of about 10{sup −4} A/cm{sup 2} at room temperature. From the capacitance-voltage measurements the free carrier concentration in GaN NWs is determined as about 10{sup 16} cm{sup −3}. Two deep levels (H200 and E280) are found in the structures containing GaN NWs. H200 is attributed to an extended defect located at the interface between the substrate and SiN{sub x} or near the sidewalls at the bottom of the NWs whereas E280 is tentatively assigned to a gallium-vacancy- or nitrogen interstitials-related defect.
- OSTI ID:
- 22218144
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 9; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CAPACITANCE
CARRIER DENSITY
CARRIERS
CONCENTRATION RATIO
CRYSTALS
DIFFUSION BARRIERS
ELECTRIC POTENTIAL
GALLIUM
GALLIUM NITRIDES
INTERFACES
INTERSTITIALS
LAYERS
LEAKAGE CURRENT
MOLECULAR BEAM EPITAXY
NITROGEN
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
VACANCIES