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Title: Electrical characterization of ensemble of GaN nanowires grown by the molecular beam epitaxy technique

High quality Schottky contacts are formed on GaN nanowires (NWs) structures grown by the molecular beam epitaxy technique on Si(111) substrate. The current-voltage characteristics show the rectification ratio of about 10{sup 3} and the leakage current of about 10{sup −4} A/cm{sup 2} at room temperature. From the capacitance-voltage measurements the free carrier concentration in GaN NWs is determined as about 10{sup 16} cm{sup −3}. Two deep levels (H200 and E280) are found in the structures containing GaN NWs. H200 is attributed to an extended defect located at the interface between the substrate and SiN{sub x} or near the sidewalls at the bottom of the NWs whereas E280 is tentatively assigned to a gallium-vacancy- or nitrogen interstitials-related defect.
Authors:
 [1] ; ; ;  [2]
  1. Technische Universität Dresden, 01062 Dresden (Germany)
  2. Institute of Physics Polish Academy of Sciences, Al. Lotnikow 32-46, 02-668 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22218144
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 9; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CAPACITANCE; CARRIER DENSITY; CARRIERS; CONCENTRATION RATIO; CRYSTALS; DIFFUSION BARRIERS; ELECTRIC POTENTIAL; GALLIUM; GALLIUM NITRIDES; INTERFACES; INTERSTITIALS; LAYERS; LEAKAGE CURRENT; MOLECULAR BEAM EPITAXY; NITROGEN; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; VACANCIES