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Title: Minority anion substitution by Ni in ZnO

We report on the lattice location of implanted Ni in ZnO using the β{sup −} emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the observed O substitution is rather puzzling. We discuss these findings with respect to the general understanding of lattice location of dopants in compound semiconductors. In particular, we discuss potential implications on the magnetic behavior of transition metal doped dilute magnetic semiconductors.
Authors:
; ; ; ;  [1] ; ;  [2] ;  [3] ;  [2] ;  [4] ;  [5]
  1. Instituut voor Kern-en Stralingsfysica, KU Leuven, 3001 Leuven (Belgium)
  2. Campus Tecnológico e Nuclear, Instituto Superior Técnico, Universidade de Lisboa, 2686-953 Sacavém (Portugal)
  3. IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Universidade do Porto, 4169-007 Porto (Portugal)
  4. (Portugal)
  5. Centro de Física Nuclear da Universidade de Lisboa, 1649-003 Lisboa (Portugal)
Publication Date:
OSTI Identifier:
22218143
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 9; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANIONS; ATOMS; CATIONS; CHANNELING; DOPED MATERIALS; EMISSION; ION IMPLANTATION; MAGNETIC SEMICONDUCTORS; NICKEL; POTENTIALS; ZINC OXIDES