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Title: Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.
Authors:
; ; ; ;  [1] ;  [2] ;  [1] ;  [3]
  1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)
  2. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22218131
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 8; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DISLOCATIONS; FABRICATION; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; STRAINS; SURFACE TREATMENTS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; VALENCE