Quantum effects in electron beam pumped GaAs

Journal Article · Mon Aug 19 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4818811· OSTI ID:22218130

Yahia, M. E. ^[1]; Azzouz, I. M. ^[2]; Moslem, W. M. ^[3]

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1. Faculty of Engineering, The British University in Egypt (BUE), El-Shorouk City, Cairo (Egypt)
2. National Institute of Laser Enhanced Sciences (NILES), Cairo University (Egypt)
3. Department of Physics, Faculty of Science, Port Said University, Port Said (Egypt)

Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.

• OSTI ID: 22218130
• Journal Information: Applied Physics Letters, Vol. 103, Issue 8; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
CORRELATIONS
DISPERSION RELATIONS
ELECTRON BEAMS
GALLIUM ARSENIDES
HOLES
HYDRODYNAMICS
NANOSTRUCTURES
PLASMA
PLASMA INSTABILITY
POTENTIALS
PUMPS
RECOILS
SEMICONDUCTOR MATERIALS
TAIL ELECTRONS