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Title: Domain formation due to surface steps in topological insulator Bi{sub 2}Te{sub 3} thin films grown on Si (111) by molecular beam epitaxy

The atomic structure of topological insulators Bi{sub 2}Te{sub 3} thin films on Si (111) substrates grown in van der Waals mode by molecular beam epitaxy has been investigated by in situ scanning tunneling microscopy and scanning transmission electron microscopy. Besides single and multiple quintuple layer (QL) steps, which are typical for the step-flow mode of growth, a number of 0.4 QL steps is observed. We determine that these steps originate from single steps at the substrate surface causing domain boundaries in the Bi{sub 2}Te{sub 3} film. Due to the peculiar structure of these domain boundaries the domains are stable and penetrate throughout the entire film.
Authors:
; ; ;  [1] ;  [2] ;  [3]
  1. Peter Grünberg Institute-9, Forschungszentrum Jülich, Jülich 52425 (Germany)
  2. (Germany)
  3. Peter Grünberg Institute-5 and Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich, Jülich 52425 (Germany)
Publication Date:
OSTI Identifier:
22218129
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 8; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH TELLURIDES; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; SURFACES; THIN FILMS; TOPOLOGY; TRANSMISSION ELECTRON MICROSCOPY; VAN DER WAALS FORCES