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Title: High transition temperature superconductor/insulator bilayers for the development of ultra-fast electronics

High transition temperature superconductor (HTc)/SrTiO{sub 3} (STO) bilayers were fabricated by sputtering deposition on (100) STO substrates. Their transport and morphological properties were characterized using conductive atomic force microscopy. The STO barriers present good insulating properties, with long attenuation lengths (λ ∼ 1 nm) which reduce the junction resistance and increase the operating critical current. The samples present roughness values smaller than 1 nm, with an extremely low density of surface defects (∼5 × 10{sup −5} defects/μm{sup 2}). The high control of the barrier quality over large defect free surfaces is encouraging for the development of microelectronics devices based in HTc Josephson junctions.
Authors:
;  [1] ;  [2] ;  [1]
  1. Consejo Nacional de Investigaciones Científicas y Técnicas, Centro Atómico Bariloche, CNEA, Bustillo 9500, 8400 Bariloche (Argentina)
  2. (Argentina)
Publication Date:
OSTI Identifier:
22218125
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 5; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; ATTENUATION; CRITICAL CURRENT; DATA; DENSITY; DEPOSITION; DIFFUSION BARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; HIGH-TC SUPERCONDUCTORS; JOSEPHSON EFFECT; JOSEPHSON JUNCTIONS; LAYERS; SEMICONDUCTOR JUNCTIONS; SOCIO-ECONOMIC FACTORS; SPUTTERING; STRONTIUM TITANATES; SURFACES; TRANSITION TEMPERATURE; VENTILATION BARRIERS