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Title: Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy

Two series of N- and Ga-face GaN Van Hoof structures were grown by plasma-assisted molecular beam epitaxy to study the surface potential barrier by contactless electroreflectance (CER). A clear CER resonance followed by strong Franz-Keldysh oscillation of period varying with the thickness of undoped GaN layer was observed for these structures. This period was much shorter for N-polar structures that means smaller surface potential barrier in these structures than in Ga-polar structures. From the analysis of built-in electric field it was determined that the Fermi-level is located 0.27 ± 0.05 and 0.60 ± 0.05 eV below the conduction band for N- and Ga-face GaN surface, respectively.
Authors:
; ; ;  [1] ; ; ;  [2] ;  [3] ; ;  [2] ;  [4]
  1. Institute of Physics, Wroclaw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland)
  2. Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw (Poland)
  3. TopGaN Sp. z o.o., Sokołowska 29/37, 01-142 Warsaw (Poland)
  4. (Poland)
Publication Date:
OSTI Identifier:
22218120
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 5; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC FIELDS; FERMI LEVEL; GALLIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; PLASMA; SEMICONDUCTOR MATERIALS; SURFACE POTENTIAL; SURFACES; THICKNESS