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Title: Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation

We determine the optical losses in gate-induced charge accumulation/inversion layers at a Si/SiO{sub 2} interface. Comparison between gate-induced charge layers and ion-implanted thin silicon films having an identical sheet resistance shows that optical losses can be significantly lower for gate-induced layers. For a given sheet resistance, holes produce higher optical loss than electrons. Measurements have been performed at λ = 1550 nm.
Authors:
; ; ;  [1] ;  [2] ;  [1] ;  [3]
  1. Institutes IPQ and IMT, Karlsruhe Institute of Technology (KIT), Karlsruhe 76131 (Germany)
  2. Physikalisches Institut and DFG-Center for Functional Nanostructures, Karlsruhe Institute of Technology, P. O. Box 6980, Karlsruhe 76049 (Germany)
  3. (IFH), ETH Zurich, Zurich (Switzerland)
Publication Date:
OSTI Identifier:
22218118
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 5; Other Information: (c) 2013 © 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; BUILDUP; HOLES; INTERFACES; ION IMPLANTATION; LAYERS; LOSSES; SEMICONDUCTOR MATERIALS; SHEETS; SILICON; SILICON OXIDES; THIN FILMS