skip to main content

SciTech ConnectSciTech Connect

Title: Electrical properties of scandium nitride epitaxial films grown on (100) magnesium oxide substrates by molecular beam epitaxy

Scandium nitride (ScN) films were grown on (100) MgO single crystals by a molecular beam epitaxy method. The effects of growth conditions, including [Sc]/[N] ratio, growth temperature, and nitrogen radical state, on the electrical properties of the ScN films were studied. The ScN films comprised many small columnar grains. Hall coefficient measurements confirmed that the ScN films were highly degenerate n-type semiconductors and that the carrier concentration of the ScN films was sensitive to the growth temperature and the nitrogen radical states during the film growth. The carrier concentrations of the ScN films ranged from 10{sup 19}–10{sup 21} cm{sup −3} while the Hall mobilities ranged from 50–130 cm{sup 2}·V{sup −1}·s{sup −1} for undoped films. The temperature-dependent Hall coefficient measurements showed that the carrier concentration is nearly independent of temperature, indicating that the change in resistivity with temperature is explained by a change in the Hall mobility. The temperature-dependence of the Hall mobility was strongly affected by the growth conditions.
Authors:
; ; ; ; ; ;  [1]
  1. Environment and Energy Materials Research Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
Publication Date:
OSTI Identifier:
22218113
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 9; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER DENSITY; CARRIERS; ELECTRIC CONDUCTIVITY; FILMS; LAYERS; MAGNESIUM OXIDES; MOBILITY; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; NITROGEN; SCANDIUM; SCANDIUM NITRIDES; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE DEPENDENCE