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Title: Ultra low-K shrinkage behavior when under electron beam in a scanning electron microscope

In this paper, we investigate the tendency of porous low-K dielectrics (also named Ultra Low-K, ULK) behavior to shrink when exposed to the electron beam of a scanning electron microscope. Various experimental electron beam conditions have been used for irradiating ULK thin films, and the resulting shrinkage has been measured through use of an atomic force microscope tool. We report the shrinkage to be a fast, cumulative, and dose dependent effect. Correlation of the shrinkage with incident electron beam energy loss has also been evidenced. The chemical modification of the ULK films within the interaction volume has been demonstrated, with a densification of the layer and a loss of carbon and hydrogen elements being observed.
Authors:
;  [1] ;  [2]
  1. ST Microelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France)
  2. Centre National d'Etudes Spatiales, 18 Avenue Edouard Belin, 31400 Toulouse (France)
Publication Date:
OSTI Identifier:
22218105
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 8; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CARBON; DIELECTRIC MATERIALS; ELECTRON BEAMS; ENERGY LOSSES; HYDROGEN; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY; SHRINKAGE; THIN FILMS