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Title: Interfacial band configuration and electrical properties of LaAlO{sub 3}/Al{sub 2}O{sub 3}/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

In order to search a gate dielectric with high permittivity on hydrogenated-diamond (H-diamond), LaAlO{sub 3} films with thin Al{sub 2}O{sub 3} buffer layers are fabricated on the H-diamond epilayers by sputtering-deposition (SD) and atomic layer deposition (ALD) techniques, respectively. Interfacial band configuration and electrical properties of the SD-LaAlO{sub 3}/ALD-Al{sub 2}O{sub 3}/H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) with gate lengths of 10, 20, and 30 μm have been investigated. The valence and conduction band offsets of the SD-LaAlO{sub 3}/ALD-Al{sub 2}O{sub 3} structure are measured by X-ray photoelectron spectroscopy to be 1.1 ± 0.2 and 1.6 ± 0.2 eV, respectively. The valence band discontinuity between H-diamond and LaAlO{sub 3} is evaluated to be 4.0 ± 0.2 eV, showing that the MOS structure acts as the gate which controls a hole carrier density. The leakage current density of the SD-LaAlO{sub 3}/ALD-Al{sub 2}O{sub 3}/H-diamond MOS diode is smaller than 10{sup −8} A cm{sup −2} at gate bias from −4 to 2 V. The capacitance-voltage curve in the depletion mode shows sharp dependence, small flat band voltage, and small hysteresis shift, which implies low positive and trapped charge densities. The MOSFETs show p-type channel and complete normally off characteristics with threshold voltages changing from −3.6more » ± 0.1 to −5.0 ± 0.1 V dependent on the gate length. The drain current maximum and the extrinsic transconductance of the MOSFET with gate length of 10 μm are −7.5 mA mm{sup −1} and 2.3 ± 0.1 mS mm{sup −1}, respectively. The enhancement mode SD-LaAlO{sub 3}/ALD-Al{sub 2}O{sub 3}/H-diamond MOSFET is concluded to be suitable for the applications of high power and high frequency electrical devices.« less
Authors:
; ;  [1] ; ;  [2] ; ;  [3] ;  [1] ;  [4] ;  [4]
  1. Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
  2. Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
  3. Materials Analysis Station, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
  4. (Japan)
Publication Date:
OSTI Identifier:
22218101
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 8; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ALUMINATES; ALUMINIUM OXIDES; CAPACITANCE; CARRIER DENSITY; CHARGE DENSITY; DEPOSITION; DIAMONDS; ELECTRIC POTENTIAL; HYDROGENATION; LANTHANUM COMPOUNDS; LEAKAGE CURRENT; MOSFET; PERMITTIVITY; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SPUTTERING; X-RAY PHOTOELECTRON SPECTROSCOPY