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Title: Overcoming challenges to the formation of high-quality polycrystalline TiO{sub 2}:Ta transparent conducting films by magnetron sputtering

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4819088· OSTI ID:22218098
; ;  [1]; ;  [2];  [1];  [3];  [4]
  1. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany)
  2. DTF Technology GmbH, 01108 Dresden (Germany)
  3. Germany
  4. Fraunhofer-Institut für Keramische Technologien und Systeme, 01277 Dresden (Germany)

The work is focused on understanding the physical processes responsible for the modification of the structure, electrical and optical properties of polycrystalline TiO{sub 2}:Ta films formed by annealing of initially amorphous films grown by direct current magnetron sputtering of electrically conductive ceramic targets. It is shown that fine tuning of the oxygen content during deposition of amorphous TiO{sub 2}:Ta films is critical to achieving low resistivity and high optical transmittance after annealing. Increasing the total pressure during magnetron sputter deposition is shown to decrease the sensitivity of the annealed films to the oxygen flow variation during deposition of the initially amorphous layers. Polycrystalline anatase TiO{sub 2}:Ta films of low electrical resistivity (ρ{sub H} = 1.5 × 10{sup −3}Ω cm), high free electron mobility (μ{sub H} = 8 cm{sup 2}/Vs), and low extinction (k{sub 550nm} = 0.006) are obtained in this way at a total pressure of 2 Pa. The dependence of the polycrystalline film electrical properties on the oxygen content is discussed in terms of Ta dopant electrical activation/deactivation taking into account the formation of compensating defects at different oxygen pressures. The temperature-dependent transport of the polycrystalline anatase TiO{sub 2}:Ta films is investigated showing the dominant role of the optical phonon scattering in the case of films with an optimum Ti/O ratio.

OSTI ID:
22218098
Journal Information:
Journal of Applied Physics, Vol. 114, Issue 8; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English