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Title: Wavelength tunable photoluminescence of ZnO{sub 1-x}S{sub x} alloy thin films grown by reactive sputtering

ZnO{sub 1−x}S{sub x} alloy thin films with various S contents were deposited on glass substrates by reactive sputtering. The films were grown in high crystalline quality and strong preferential crystallographic orientation. Variations of the lattice constant c followed Vegard's law. X-ray photoelectron spectroscopy confirmed the substitution of O by S in ZnO. The composition dependence of the band gap energy in ZnO{sub 1−x}S{sub x} system was investigated and the band gap bowing parameter was estimated to be about 1.46 eV. The incorporation of S led to the expected redshift of the band gap related photoluminescence emission of ZnO{sub 1−x}S{sub x} films up to 320 meV. The results indicate that ZnO{sub 1−x}S{sub x} films could hold the prospect for the development of ZnO based quantum structures.
Authors:
; ; ; ; ; ; ;  [1]
  1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
Publication Date:
OSTI Identifier:
22218097
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 8; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALLOYS; CRYSTALLOGRAPHY; DEPOSITION; ENERGY GAP; EV RANGE; LATTICE PARAMETERS; ORIENTATION; PHOTOLUMINESCENCE; RED SHIFT; SEMICONDUCTOR MATERIALS; SPUTTERING; SUBSTRATES; THIN FILMS; VARIATIONS; VEGARD LAW; WAVELENGTHS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES