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Title: Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon

The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited free-carriers. As a result, the experimental conditions required for the excitation of surface plasmon polaritons are revealed. The periods of the resulting structures are then investigated as a function of laser parameters, such as the angle of incidence, laser fluence, and polarization. The obtained dependencies provide a way of better control over the properties of the periodic structures induced by femtosecond laser on the surface of a semiconductor material.
Authors:
 [1] ;  [2] ;  [1] ; ; ;  [3]
  1. Laboratoire Hubert Curien (LabHC), UMR CNRS 5516 - Université Jean-Monnet. Bâtiment F, 18 rue du Professeur Benoit Lauras, F-42000 Saint-Etienne (France)
  2. (LP3), UMR CNRS 7341 - Aix-Marseille Université, Parc Technologique et Scientifique de Luminy, Case 917, 163 avenue de Luminy, F-13288 Marseille Cedex 09 (France)
  3. Laboratoire Lasers, Plasmas et Procédés Photoniques (LP3), UMR CNRS 7341 - Aix-Marseille Université, Parc Technologique et Scientifique de Luminy, Case 917, 163 avenue de Luminy, F-13288 Marseille Cedex 09 (France)
Publication Date:
OSTI Identifier:
22218088
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 8; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BEAMS; CARRIERS; EXCITATION; INCIDENCE ANGLE; LASER RADIATION; LASERS; PERIODICITY; PLASMONS; POLARONS; SEMICONDUCTOR MATERIALS; SILICON; SURFACES