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Title: Carbon film deposition on SnO{sub 2}/Si(111) using DC unbalanced magnetron sputtering

In this paper, carbon deposition on SnO{sub 2} layer using DC unbalanced magnetron-sputtering technique at low temperature has been systematically studied. Sputtering process were carried out at pressure of 4.6×10{sup −2} Torr by keeping the substrate temperature at 300 °C. SnO{sub 2} were growth on silicon (111) substrate using thermal evaporation and continuing with dry oxidation of Sn at 225 °C. Thermal evaporation for high purity Sn was conducted by maintain the current source as high as 40 ampere. The quality of SnO{sub 2} on Si(111) and the characteristic of carbon thin film on SnO{sub 2} were analized by mean XRD, FTIR and Raman spectra. XRD analysis shows that SnO{sub 2} film is growth uniformly on Si(111). FTIR and Raman spectra confirm the formation of thin film carbon on SnO{sub 2}. Additionally, thermal annealing for some sample series have been performed to study their structural stability. The change of atomic structure due to thermal annealing were analized by Raman and XRD spectra.
Authors:
;  [1]
  1. Quantum Semiconductor and Devices Lab. Dept. of Physics, Institut Teknologi Bandung, Ganesa 10 Bandung (Indonesia)
Publication Date:
OSTI Identifier:
22218080
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1554; Journal Issue: 1; Conference: PIPS-2013: Padjadjaran international physics symposium 2013: Contribution of physics on environmental and energy conservations, Padjadjaran (Indonesia), 7-9 May 2013; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CARBON; CRYSTAL STRUCTURE; EVAPORATION; FOURIER TRANSFORMATION; INFRARED SPECTRA; LAYERS; OXIDATION; RAMAN SPECTRA; SILICON; SPUTTERING; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; TIN OXIDES; VACUUM COATING; X-RAY DIFFRACTION