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Title: Sulfur passivation of surface electrons in highly Mg-doped InN

Electron accumulation with a sheet density greater than 10{sup 13} cm{sup −2} usually occurs at InN surfaces. Here, the effects of treatment with ammonium sulfide ((NH{sub 4}){sub 2}S{sub x}) on the surface electronic properties of highly Mg-doped InN (>4×10{sup 18} cm{sup −3}) have been investigated with high resolution x-ray photoemission spectroscopy. The valence band photoemission spectra show that the surface Fermi level decreases by approximately 0.08 eV with (NH{sub 4}){sub 2}S{sub x} treatment, resulting in a decrease of the downward band bending and up to a 70% reduction in the surface electron sheet density.
Authors:
;  [1] ;  [2] ;  [3] ;  [2] ;  [4]
  1. Stephenson Institute for Renewable Energy and Department of Physics, University of Liverpool, Liverpool L69 4ZF (United Kingdom)
  2. Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8140 (New Zealand)
  3. Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)
  4. (United States)
Publication Date:
OSTI Identifier:
22218063
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 10; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; APPROXIMATIONS; BENDING; DENSITY; DOPED MATERIALS; ELECTRON DENSITY; ELECTRONS; FERMI LEVEL; INDIUM NITRIDES; MAGNESIUM; PASSIVATION; PHOTOEMISSION; REDUCTION; SEMICONDUCTOR MATERIALS; SHEETS; SULFUR; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY