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Title: Epitaxial growth of the topological insulator Bi{sub 2}Se{sub 3} on Si(111): Growth mode, lattice parameter, and strain state

Using spot profile analysis low energy electron diffraction, we studied the growth mode and strain state of ultra-thin epitaxial Bi{sub 2}Se{sub 3}(111) films grown by molecular beam epitaxy on Si(111). The first layer grows as complete quintuple layer and covers the Si substrate before the next layer nucleates. Its lateral lattice parameter is increased by 1% compared with the value of a{sub ‖} = 4.136 Å for a 6-nm-thick film. With increasing film thickness, a continuous change of the lattice parameter is observed to an asymptotic value, which is explained by a van der Waals-like bonding between the Bi{sub 2}Se{sub 3} film and the Si substrate.
Authors:
; ; ; ;  [1]
  1. Department of Physics and Center for Nanointegration CENIDE, University of Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg (Germany)
Publication Date:
OSTI Identifier:
22218051
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 11; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BISMUTH SELENIDES; ELECTRON DIFFRACTION; FILMS; LATTICE PARAMETERS; LAYERS; MOLECULAR BEAM EPITAXY; SOCIO-ECONOMIC FACTORS; STRAINS; SUBSTRATES; THICKNESS; TOPOLOGY; VAN DER WAALS FORCES