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Title: Low temperature grown GaNAsSb: A promising material for photoconductive switch application

We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 10{sup 7} Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.
Authors:
; ; ; ;  [1] ; ;  [2] ; ;  [3] ;  [4]
  1. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)
  2. Laboratoire d'Electronique et Electromagnétisme, Pierre and Marie Curie University, 4 Place Jussieu, 75005 Paris (France)
  3. Institute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, Universite des Sciences et Technologies de Lille, BP 60069, 59652 Villeneuve d'Ascq Cedex (France)
  4. Thales Airborne Systems, 2 Avenue Gay Lussac, 78852 Elancourt (France)
Publication Date:
OSTI Identifier:
22218050
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 11; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ANTIMONY; CARRIER LIFETIME; GALLIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; NITROGEN; RADIOWAVE RADIATION; SEMICONDUCTOR MATERIALS; SWITCHES