Emissivity properties of silicon wafers and their application to radiation thermometry

Journal Article · Wed Sep 11 00:00:00 EDT 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4819629· OSTI ID:22218041

Iuchi, T.; Seo, T. ^[1]

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1. Toyo University, School of Engineering, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan)

We studied the spectral and directional emissivities of silicon wafers using an optical polarization technique. Based on the simulation and experimental results, we developed two different radiation thermometry methods for silicon wafers, the first based on a polarized emissivity-invariant condition, and the second based on the relationship between the ratio of the p-to s-polarized radiance and the polarized emissivity. These methods can be performed at temperatures above 600 °C and over a wide wavelength range (0.9∼5 μm), irrespective of dielectric film thickness and substrate resistivity due to the dopant concentrations. Temperature measurements were estimated to have expanded uncertainties (k=2) of less than 5 °C. A radiometer system with wavelengths above 4.5 μm was successfully developed because the system was not influenced by background noise caused by a high-intensity heating lamp.

• OSTI ID: 22218041
• Journal Information: AIP Conference Proceedings, Vol. 1552, Issue 1; Conference: 9. international temperature symposium, Los Angeles, CA (United States), 19-23 Mar 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BACKGROUND NOISE
COMPUTERIZED SIMULATION
CONCENTRATION RATIO
DIELECTRIC MATERIALS
EMISSIVITY
FILMS
HEATING
LIGHT BULBS
POLARIZATION
RADIATION DETECTION
RADIOMETERS
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
TEMPERATURE MEASUREMENT
THERMOMETERS
WAVELENGTHS