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Title: Emissivity properties of silicon wafers and their application to radiation thermometry

We studied the spectral and directional emissivities of silicon wafers using an optical polarization technique. Based on the simulation and experimental results, we developed two different radiation thermometry methods for silicon wafers, the first based on a polarized emissivity-invariant condition, and the second based on the relationship between the ratio of the p-to s-polarized radiance and the polarized emissivity. These methods can be performed at temperatures above 600 °C and over a wide wavelength range (0.9∼5 μm), irrespective of dielectric film thickness and substrate resistivity due to the dopant concentrations. Temperature measurements were estimated to have expanded uncertainties (k=2) of less than 5 °C. A radiometer system with wavelengths above 4.5 μm was successfully developed because the system was not influenced by background noise caused by a high-intensity heating lamp.
Authors:
;  [1]
  1. Toyo University, School of Engineering, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan)
Publication Date:
OSTI Identifier:
22218041
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1552; Journal Issue: 1; Conference: 9. international temperature symposium, Los Angeles, CA (United States), 19-23 Mar 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; BACKGROUND NOISE; COMPUTERIZED SIMULATION; CONCENTRATION RATIO; DIELECTRIC MATERIALS; EMISSIVITY; FILMS; HEATING; LIGHT BULBS; POLARIZATION; RADIATION DETECTION; RADIOMETERS; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; TEMPERATURE MEASUREMENT; THERMOMETERS; WAVELENGTHS