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Title: Low-temperature magnetic characterization of optimum and etch-damaged in-plane magnetic tunnel junctions

We describe low-temperature characterization of magnetic tunnel junctions (MTJs) patterned by reactive ion etching for spin-transfer-torque magnetic random access memory. Magnetotransport measurements of typical MTJs show increasing tunneling magnetoresistance (TMR) and larger coercive fields as temperature is decreased down to 10 K. However, MTJs selected from the high-resistance population of an MTJ array exhibit stable intermediate magnetic states when measured at low temperature and show TMR roll-off below 100 K. These non-ideal low-temperature behaviors arise from edge damage during the etch process and can have negative impacts on thermal stability of the MTJs.
Authors:
; ;  [1] ; ;  [2]
  1. Center for Magnetic Recording Research, University of California, San Diego, La Jolla, California 92093 (United States)
  2. Advanced Technology, Qualcomm, Inc., San Diego, California 92121 (United States)
Publication Date:
OSTI Identifier:
22218009
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 11; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COERCIVE FORCE; DAMAGE; ETCHING; INTERFACES; IONS; MAGNETISM; MAGNETORESISTANCE; SPUTTERING; STABILITY; SUPERCONDUCTING JUNCTIONS; TUNNEL EFFECT