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Title: Carbon mediated reduction of silicon dioxide and growth of copper silicide particles in uniform width channels

We show that surface arc-discharge deposited carbon plays a critical intermediary role in the breakdown of thermally grown oxide diffusion barriers of 90 nm on a silicon wafer at 1035 °C in an Ar/H{sub 2} atmosphere, resulting in the formation of epitaxial copper silicide particles in ≈ 10 μm wide channels, which are aligned with the intersections of the (100) surface of the wafer and the (110) planes on an oxidized silicon wafer, as well as endotaxial copper silicide nanoparticles within the wafer bulk. We apply energy dispersive x-ray spectroscopy, in combination with scanning and transmission electron microscopy of focused ion beam fabricated lammelas and trenches in the structure to elucidate the process of their formation.
Authors:
; ;  [1]
  1. DTU Nanotech, Technical University of Denmark, Ørsteds Plads 344, 2800 Kgs. Lyngby (Denmark)
Publication Date:
OSTI Identifier:
22218007
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 11; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON; COPPER SILICIDES; EPITAXY; ION BEAMS; NANOSTRUCTURES; PARTICLES; REDUCTION; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON OXIDES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; WIDTH; X RADIATION; X-RAY SPECTROSCOPY