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Title: Ion effects in hydrogen-induced blistering of Mo/Si multilayers

The role that energetic (>800 eV) hydrogen ions play in inducing and modifying the formation of blisters in nanoscale Mo/Si multilayer samples is investigated. Such samples are confirmed to be susceptible to blistering by two separate mechanisms. The first is attributed to the segregation of H atoms to voids and vacancies associated with the outermost Mo layer, driving blister formation in the form of H{sub 2} filled bubbles. This process can occur in the absence of ions. A second blister distribution emerges when energetic ions are present in the irradiating flux. This is attributed to an ion-induced vacancy clustering mechanism that produces void blisters. The defects and strained states associated with the Mo-on-Si interfaces provide the preferred nucleation points for blistering in both cases. The effects of ions are ascribed to promotion of hydrogen uptake and mobility, in particular through the Si layers; to the generation of additional mobile species in the Si and Mo layers; and to the creation of new blister nucleation points. In addition to directly stimulating blistering via vacancy clustering, ions modify the development of H{sub 2}-filled blisters. This is most evident in the formation of multi-component structures due to overlapping delaminations at different layer interfaces.more » This affect is attributed to the introduction of active transport of hydrogen from the H{sub 2} filled blisters across the outermost Mo-on-Si interface to the underlying layers. Ion-induced variations in hydrogen uptake and distribution and in the rates of blister nucleation and growth produce lateral differences in blister size and areal number density that create a macroscopic concentric pattern across the surface.« less
Authors:
;  [1] ;  [1] ;  [2]
  1. FOM Institute DIFFER—Dutch Institute for Fundamental Energy Research, Postbus 1207, 3430 BE Nieuwegein (Netherlands)
  2. (Netherlands)
Publication Date:
OSTI Identifier:
22218004
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 11; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BLISTERS; DENSITY; DISTRIBUTION; FABRICATION; HYDROGEN IONS; INTERFACES; ION BEAMS; LAYERS; MOBILITY; MOLYBDENUM; NANOSTRUCTURES; NUCLEATION; SEGREGATION; SEMICONDUCTOR MATERIALS; SOLIDS; STRAINS; SURFACES; TAIL IONS; VACANCIES