skip to main content

Title: Bimodal substrate biasing to control γ-Al{sub 2}O{sub 3} deposition during reactive magnetron sputtering

Al{sub 2}O{sub 3} thin films have been deposited at substrate temperatures between 500 °C and 600 °C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films were characterized by X-ray diffraction and Fourier transform infrared spectroscopy. The film structure being amorphous, nanocrystalline, or crystalline was correlated with characteristic ion energy distributions. The evolving crystalline structure is connected with different levels of displacements per atom (dpa) in the growing film as being derived from TRIM simulations. The boundary between the formation of crystalline films and amorphous or nanocrystalline films was at 0.8 dpa for a substrate temperature of 500 °C. This threshold shifts to 0.6 dpa for films grown at 550 °C.
Authors:
; ; ; ;  [1] ;  [2]
  1. Research Group Reactive Plasmas, Ruhr-Universität Bochum, D-44801 Bochum (Germany)
  2. Materials Chemistry, RWTH Aachen University, D-52074 Aachen (Germany)
Publication Date:
OSTI Identifier:
22217999
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 11; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; ATOMIC DISPLACEMENTS; DEPOSITION; ENERGY SPECTRA; FABRICATION; FOURIER TRANSFORM SPECTROMETERS; INFRARED SPECTRA; IONS; MAGNETRONS; NANOSTRUCTURES; SPUTTERING; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION