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Title: Energy resolution and related charge carrier mobility in LaBr{sub 3}:Ce scintillators

The scintillation response of LaBr{sub 3}:Ce scintillation crystals was studied as function of temperature and Ce concentration with synchrotron X-rays between 9 keV and 100 keV. The results were analyzed using the theory of carrier transport in wide band gap semiconductors to gain new insights into charge carrier generation, diffusion, and capture mechanisms. Their influence on the efficiency of energy transfer and conversion from X-ray or γ-ray photon to optical photons and therefore on the energy resolution of lanthanum halide scintillators was studied. From this, we will propose that scattering of carriers by both the lattice phonons and by ionized impurities are key processes determining the temperature dependence of carrier mobility and ultimately the scintillation efficiency and energy resolution. When assuming about 100 ppm ionized impurity concentration in 0.2% Ce{sup 3+} doped LaBr{sub 3,} mobilities are such that we can reproduce the observed temperature dependence of the energy resolution, and in particular, the minimum in resolution near room temperature is reproduced.
Authors:
; ; ;  [1]
  1. Luminescence Materials Research Group, Faculty of Applied Sciences, Delft University of Technology, Mekelweg 15, Delft, 2629JB (Netherlands)
Publication Date:
OSTI Identifier:
22217979
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 12; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CARRIER MOBILITY; CARRIERS; CERIUM; CERIUM IONS; CHARGE CARRIERS; DOPED MATERIALS; ENERGY RESOLUTION; KEV RANGE 10-100; LANTHANUM BROMIDES; PHOSPHORS; PHOTONS; SCINTILLATIONS; SEMICONDUCTOR MATERIALS; SOLID SCINTILLATION DETECTORS; SYNCHROTRONS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; X RADIATION