Growth and phase transition characteristics of pure M-phase VO{sub 2} epitaxial film prepared by oxide molecular beam epitaxy
Abstract
VO{sub 2} epitaxial film with large size has been prepared by oxide-molecular beam epitaxy method on Al{sub 2}O{sub 3} (0001) substrate. The VO{sub 2} film shows a perfect crystal orientation, uniformity, and distinct metal-insulator phase transition (MIT) characteristics. It is observed that the MIT character is closely associated with the crystal defects such as oxygen vacancies. By controlling the growth condition, the MIT temperature can be tuned through modifying the content of oxygen vacancies. The role of the oxygen vacancies on the phase transition behavior of this VO{sub 2} film is discussed in the framework of the hybridization theory and the valence state of vanadium.
- Authors:
-
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China)
- Publication Date:
- OSTI Identifier:
- 22217969
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 103; Journal Issue: 13; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ALUMINIUM OXIDES; CRYSTALS; FILMS; LAYERS; MOLECULAR BEAM EPITAXY; ORIENTATION; OXYGEN; PHASE TRANSFORMATIONS; SUBSTRATES; VACANCIES; VALENCE; VANADIUM; VANADIUM OXIDES
Citation Formats
Fan, L. L., Chen, S., Wu, Y. F., Chen, F. H., Chu, W. S., Chen, X., Zou, C. W., Wu, Z. Y., and Institute of High Energy Physics, Chinese Academy of Science, Beijing 100049. Growth and phase transition characteristics of pure M-phase VO{sub 2} epitaxial film prepared by oxide molecular beam epitaxy. United States: N. p., 2013.
Web. doi:10.1063/1.4823511.
Fan, L. L., Chen, S., Wu, Y. F., Chen, F. H., Chu, W. S., Chen, X., Zou, C. W., Wu, Z. Y., & Institute of High Energy Physics, Chinese Academy of Science, Beijing 100049. Growth and phase transition characteristics of pure M-phase VO{sub 2} epitaxial film prepared by oxide molecular beam epitaxy. United States. https://doi.org/10.1063/1.4823511
Fan, L. L., Chen, S., Wu, Y. F., Chen, F. H., Chu, W. S., Chen, X., Zou, C. W., Wu, Z. Y., and Institute of High Energy Physics, Chinese Academy of Science, Beijing 100049. 2013.
"Growth and phase transition characteristics of pure M-phase VO{sub 2} epitaxial film prepared by oxide molecular beam epitaxy". United States. https://doi.org/10.1063/1.4823511.
@article{osti_22217969,
title = {Growth and phase transition characteristics of pure M-phase VO{sub 2} epitaxial film prepared by oxide molecular beam epitaxy},
author = {Fan, L. L. and Chen, S. and Wu, Y. F. and Chen, F. H. and Chu, W. S. and Chen, X. and Zou, C. W. and Wu, Z. Y. and Institute of High Energy Physics, Chinese Academy of Science, Beijing 100049},
abstractNote = {VO{sub 2} epitaxial film with large size has been prepared by oxide-molecular beam epitaxy method on Al{sub 2}O{sub 3} (0001) substrate. The VO{sub 2} film shows a perfect crystal orientation, uniformity, and distinct metal-insulator phase transition (MIT) characteristics. It is observed that the MIT character is closely associated with the crystal defects such as oxygen vacancies. By controlling the growth condition, the MIT temperature can be tuned through modifying the content of oxygen vacancies. The role of the oxygen vacancies on the phase transition behavior of this VO{sub 2} film is discussed in the framework of the hybridization theory and the valence state of vanadium.},
doi = {10.1063/1.4823511},
url = {https://www.osti.gov/biblio/22217969},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 13,
volume = 103,
place = {United States},
year = {Mon Sep 23 00:00:00 EDT 2013},
month = {Mon Sep 23 00:00:00 EDT 2013}
}
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