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Title: Growth and phase transition characteristics of pure M-phase VO{sub 2} epitaxial film prepared by oxide molecular beam epitaxy

VO{sub 2} epitaxial film with large size has been prepared by oxide-molecular beam epitaxy method on Al{sub 2}O{sub 3} (0001) substrate. The VO{sub 2} film shows a perfect crystal orientation, uniformity, and distinct metal-insulator phase transition (MIT) characteristics. It is observed that the MIT character is closely associated with the crystal defects such as oxygen vacancies. By controlling the growth condition, the MIT temperature can be tuned through modifying the content of oxygen vacancies. The role of the oxygen vacancies on the phase transition behavior of this VO{sub 2} film is discussed in the framework of the hybridization theory and the valence state of vanadium.
Authors:
; ; ; ; ; ;  [1] ;  [1] ;  [2]
  1. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22217969
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 13; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; CRYSTALS; FILMS; LAYERS; MOLECULAR BEAM EPITAXY; ORIENTATION; OXYGEN; PHASE TRANSFORMATIONS; SUBSTRATES; VACANCIES; VALENCE; VANADIUM; VANADIUM OXIDES