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Title: An approach to tune the amplitude of surface ripple patterns

An approach is presented to tune the amplitude of ripple patterns using ion beam. By varying the depth location of amorphous/crystalline interface, ripple patterns of different amplitude with similar wavelength were grown on the surface of Si (100) using 50 keV Ar{sup +} beam irradiation. Atomic force microscopy study demonstrates the tuning of amplitude of ripples patterns for wide range. Rutherford backscattering channeling measurement was performed to measure the depth location of amorphous/crystalline interface. It is postulated that the ion beam stimulated solid flow inside the amorphous layer controls the wavelength, whereas mass rearrangement at amorphous/crystalline interface controls the amplitude.
Authors:
;  [1] ;  [1] ;  [2]
  1. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110067 (India)
  2. (India)
Publication Date:
OSTI Identifier:
22217967
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 13; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMPLITUDES; ARGON IONS; ATOMIC FORCE MICROSCOPY; CHANNELING; CONTROL; DEPTH; INTERFACES; ION BEAMS; IRRADIATION; LAYERS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SOLIDS FLOW; SURFACES; WAVELENGTHS