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Title: In situ study of atomic layer deposition Al{sub 2}O{sub 3} on GaP (100)

The interfacial chemistry of atomic layer deposition (ALD) of Al{sub 2}O{sub 3} on chemically treated GaP (100) has been studied using in situ X-ray photoelectron spectroscopy. A “self-cleaning” effect for Ga-oxide upon exposure to trimethylaluminum is seen to be efficient on the native oxide and chemically treated surfaces. The phosphorus oxide chemical states are seen to change during the ALD process, but the total concentration of P-oxides is seen to remain constant throughout the ALD process.
Authors:
; ; ; ; ;  [1] ;  [2]
  1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)
  2. Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)
Publication Date:
OSTI Identifier:
22217958
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 12; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ABUNDANCE; ALUMINIUM OXIDES; CHEMICAL STATE; CHEMISTRY; CONCENTRATION RATIO; ECOLOGICAL CONCENTRATION; GALLIUM PHOSPHIDES; PHOSPHORUS OXIDES; SEMICONDUCTOR MATERIALS; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY