skip to main content

Title: Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4⋅10{sup 20} cm{sup −3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.
Authors:
; ; ; ; ; ; ;  [1] ; ; ; ;  [2] ;  [3]
  1. Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, Québec (Canada)
  2. Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada)
  3. Cyrium Technologies Inc., Ottawa, ON (Canada)
Publication Date:
OSTI Identifier:
22217956
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1556; Journal Issue: 1; Conference: CPV-9: 9. international conference on concentrator photovoltaic systems, Miyazaki (Japan), 15-17 Apr 2013; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; CONCENTRATION RATIO; EPITAXY; GALLIUM ARSENIDES; HETEROJUNCTIONS; HOLES; INTERFACES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SOLAR CELLS; TUNNEL EFFECT; VARIATIONS