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Title: Chemical sputtering of graphite by low temperature nitrogen plasmas at various substrate temperatures and ion flux densities

We report measurements of chemical sputtering yields of graphite exposed to low temperature nitrogen plasmas. The influence of surface temperature and incoming ion energy on the sputtering yields has been investigated in two distinct ion flux density regimes. Sputtering yields grow consistently with increasing temperatures in experiments with low flux density (Γ{sub i}≈10{sup 20} m{sup −2}s{sup −1}−10{sup 21} m{sup −2}s{sup −1}) and high flux density (Γ{sub i}≈10{sup 23} m{sup −2}s{sup −1}). Moreover, empirical fitting of the data suggests that the temperature of 670 °C is optimal for chemical sputtering at high flux density. Negative biasing of the samples was used to vary the ion energy in the low flux density regime. The sputtering yield in this case increases from 0.07 atoms/ion for E{sub i} = 1.5 eV to 0.19 atoms/ion for E{sub i} = 35 eV. After taking into account the dependence of the yields on temperature and ion energy, we evidenced a flux dependence of sputtering, similar to that found for chemical sputtering of carbon by hydrogen.
Authors:
; ; ; ;  [1]
  1. FOM Institute DIFFER – Dutch Institute for Fundamental Energy Research, Association EURATOM–FOM, Partner in the Trilateral Euregio Cluster, P.O. Box 1207, NL–3430 BE Nieuwegein (Netherlands)
Publication Date:
OSTI Identifier:
22217952
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 13; Other Information: (c) 2013 EURATOM; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FLUX DENSITY; GRAPHITE; HYDROGEN; IONS; NITROGEN; PLASMA; SPUTTERING; SUBSTRATES; SURFACES; YIELDS