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Title: Strain-induced self-assembly of Ge nanodashes, nanodumbbells, and dot chains on Si(001)

We investigate the growth of self-assembled Ge nanostructures on top of embedded Ge nanowires on Si(001) substrates. Ge nanostructures, such as nanodashes, nanodumbbells, and dot chains are observed simply by tuning the growth temperature and thickness of the Si spacer between the Ge layers. The self-assembly process is governed by the surface strain fields generated by the embedded Ge nanowires and is well-described by our theoretical calculations. The catalyst-free and horizontal growth of such Ge nanostructures directly on Si(001) is attractive for investigating exotic transport properties through Si/Ge-based quantum devices.
Authors:
 [1] ;  [2] ;  [1] ;  [3]
  1. Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany)
  2. (Australia)
  3. (Germany)
Publication Date:
OSTI Identifier:
22217945
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 14; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CATALYSTS; EQUIPMENT; FABRICATION; QUANTUM DOTS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SPACERS; STRAINS; SUBSTRATES; SURFACES; TENSILE PROPERTIES; THICKNESS