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Title: Strain relaxation in epitaxial SrRuO{sub 3} thin films on LaAlO{sub 3} substrates

Strain relaxation behavior of epitaxial SrRuO{sub 3} thin films on (001) LaAlO{sub 3} substrates was investigated using high resolution X-ray diffraction. Lattice distortion and dislocation densities were systematically studied with samples under different growth conditions. Reciprocal space maps reveal different strain relaxation behavior in SrRuO{sub 3} thin films grown at different temperatures. Two kinds of strain relaxation mechanisms were proposed to understand the growth dynamics, including the evolution of threading dislocations and the tilt of crystalline planes.
Authors:
; ; ;  [1] ; ; ; ; ;  [2]
  1. State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)
  2. Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, USA and Department of Physics and The Texas Center for Superconductivity, University of Houston, Houston, Texas 77204 (United States)
Publication Date:
OSTI Identifier:
22217939
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 14; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINATES; DENSITY; DISLOCATIONS; EPITAXY; LANTHANUM COMPOUNDS; LAYERS; MAPS; RELAXATION; RESOLUTION; RUTHENIUM COMPOUNDS; SPACE; STRAINS; STRONTIUM COMPOUNDS; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION