skip to main content

SciTech ConnectSciTech Connect

Title: In-situ energy dispersive x-ray diffraction study of the growth of CuO nanowires by annealing method

The in-situ growth of CuO nanowires was studied by Energy Dispersive X-ray Diffraction (EDXRD) to observe the mechanism of growth. The study was carried out for comparison at two temperatures—at 500 °C, the optimum temperature of the nanowires growth, and at 300 °C just below the temperature range of the growth. The in situ observation revealed the successive oxidation of Cu foil to Cu{sub 2}O layer and finally to CuO layer. Further analysis showed the presence of a compressive stress in CuO layer due to interface at CuO and Cu{sub 2}O layers. The compressive stress was found to increase with the growth of the nanowires at 500 °C while it relaxed with the growth of CuO layer at 300 °C. The present results do not support the existing model of stress relaxation induced growth of nanowires. Based on the detailed Transmission Electron Microscope, Scanning Electron Microscope, and EDXRD results, a microstructure based growth model has been suggested.
Authors:
; ;  [1] ; ; ;  [2]
  1. Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced technology, Indore-452013 (India)
  2. High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Mumbai (India)
Publication Date:
OSTI Identifier:
22217935
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 14; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; COPPER OXIDES; CRYSTAL STRUCTURE; FOILS; INTERFACES; LAYERS; MICROSTRUCTURE; OXIDATION; QUANTUM WIRES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; STRESS RELAXATION; STRESSES; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION; X-RAY DIFFRACTION