In-situ energy dispersive x-ray diffraction study of the growth of CuO nanowires by annealing method
- Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced technology, Indore-452013 (India)
- High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Mumbai (India)
The in-situ growth of CuO nanowires was studied by Energy Dispersive X-ray Diffraction (EDXRD) to observe the mechanism of growth. The study was carried out for comparison at two temperatures—at 500 °C, the optimum temperature of the nanowires growth, and at 300 °C just below the temperature range of the growth. The in situ observation revealed the successive oxidation of Cu foil to Cu{sub 2}O layer and finally to CuO layer. Further analysis showed the presence of a compressive stress in CuO layer due to interface at CuO and Cu{sub 2}O layers. The compressive stress was found to increase with the growth of the nanowires at 500 °C while it relaxed with the growth of CuO layer at 300 °C. The present results do not support the existing model of stress relaxation induced growth of nanowires. Based on the detailed Transmission Electron Microscope, Scanning Electron Microscope, and EDXRD results, a microstructure based growth model has been suggested.
- OSTI ID:
- 22217935
- Journal Information:
- Journal of Applied Physics, Vol. 114, Issue 14; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
COPPER OXIDES
CRYSTAL STRUCTURE
FOILS
INTERFACES
LAYERS
MICROSTRUCTURE
OXIDATION
QUANTUM WIRES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
STRESS RELAXATION
STRESSES
TRANSMISSION ELECTRON MICROSCOPY
X RADIATION
X-RAY DIFFRACTION