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Title: Narrow spectral linewidth of single zinc-blende GaN/AlN self-assembled quantum dots

We study by microphotoluminescence the optical properties of single self-assembled zinc-blende GaN/AlN quantum dots grown by plasma-assisted molecular beam epitaxy. As opposed to previous reports, the high quality of such zinc-blende GaN quantum dots allows us to evidence a weak acoustic phonon sideband as well as a limited spectral diffusion. As a result, we report on resolution-limited quantum dot linewidths as narrow as 500 ± 50 μeV. We finally confirm the fast radiative lifetime and high-temperature operation of such quantum dots.
Authors:
 [1] ;  [2] ; ;  [3] ;  [1] ;  [4]
  1. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)
  2. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)
  3. Department Physik, Universität Paderborn, Warburger Str. 100, 33098 Paderborn (Germany)
  4. (Japan)
Publication Date:
OSTI Identifier:
22217928
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 15; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; DIFFUSION; GALLIUM NITRIDES; LINE WIDTHS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHONONS; PHOTOLUMINESCENCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; ZINC SULFIDES