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Title: Ga nanoparticle-enhanced photoluminescence of GaAs

We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.
Authors:
; ; ;  [1] ; ; ; ;  [2] ;  [1] ;  [3] ;  [1] ;  [3] ;  [1] ;  [3]
  1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)
  2. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22217923
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 10; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EFFICIENCY; GALLIUM ARSENIDES; ION BEAMS; IRRADIATION; NANOSTRUCTURES; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SURFACES