Highly bent (110) Ge crystals for efficient steering of ultrarelativistic beams

Journal Article · Mon Oct 21 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4824798· OSTI ID:22217921

De Salvador, D.; Maggioni, G.; Carturan, S.; Bazzan, M.; Argiolas, N.; Carnera, A. ^[1]; Dalla Palma, M.; Della Mea, G. ^[2]; Bagli, E.; Mazzolari, A.; Bandiera, L.; Guidi, V. ^[3]; Lietti, D.; Berra, A.; Guffanti, G.; Prest, M. ^[4]; Vallazza, E. ^[5]

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1. INFN Laboratori Nazionali di Legnaro, Viale Università 2, 35020 Legnaro (PD) and Dipartimento di Fisica e Astronomia, Università di Padova, Via Marzolo 8, 35131 Padova (Italy)
2. INFN Laboratori Nazionali di Legnaro, Viale Università 2, 35020 Legnaro (PD) and Dipartimento di Ingegneria Industriale, Università di Trento, Via Mesiano 77, 38050 Trento (Italy)
3. INFN Sezione di Ferrara, Dipartimento di Fisica, Università di Ferrara Via Saragat 1, 44100 Ferrara (Italy)
4. Dipartimento di Scienza e Alta Tecnologia, Università dell'Insubria, Via Valleggio 11, 22100 Como and INFN Sezione di Milano Bicocca, Piazza della Scienza 3, 20126 Milan (Italy)
5. INFN Sezione di Trieste, Via Valerio 2, 34127 Trieste (Italy)

Thanks to the effective electrostatic potential generated by the ordered atomic structure, bent crystals can efficiently deflect ultra relativistic charged beams by means of planar and axial channeling phenomena as well as of the recently discovered volume reflection effect. Most of the experimental knowledge about these phenomena has been gathered with Si crystals, but it has been recently demonstrated that the steering performance can be improved by using high quality Ge materials which have a larger atomic number. In this paper, we investigate channeling and volume reflection of 400 GeV protons from (110) lattice planes in highly bent Ge strips crystals. Both production and characterization of the strips are presented. Herein, the experimental results on deflection are compared with theoretical predictions, with previous published data and with the expected performances of Si crystals in similar experimental conditions.

• OSTI ID: 22217921
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 15; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BEAMS
CHANNELING
CRYSTALS
PERFORMANCE
PROTONS
REFLECTION
RELATIVISTIC RANGE
SEMICONDUCTOR MATERIALS