skip to main content

SciTech ConnectSciTech Connect

Title: Epitaxy and stress of MgO/GaAs(001) heterostructures

We report on the preparation of epitaxial MgO film on GaAs(001) substrates by molecular beam epitaxy at growth temperature of 20–200 °C. Reflection high energy electron diffraction, x-ray diffraction, and high resolution transmission electron microscopy reveal the growth of ordered crystalline cubic MgO(001) film at ∼200 °C with MgO(001)[100]|| GaAs(001)[100] and a 4 : 3 lattice registry. The surface of the MgO films, characterized by atomic force microscopy, exhibits a root mean square roughness of only 0.5 nm. In situ stress measurements reveal tensile stress as low as 1.7 GPa for a growth temperature of 200 °C in good agreement with the calculated residual misfit strain.
Authors:
; ; ;  [1]
  1. Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität Linz, Altenberger Straße 69, A-4040 Linz (Austria)
Publication Date:
OSTI Identifier:
22217920
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 15; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; ELECTRON DIFFRACTION; FILMS; GALLIUM ARSENIDES; LAYERS; MAGNESIUM OXIDES; MOLECULAR BEAM EPITAXY; PRESSURE RANGE GIGA PA; REFLECTION; RESIDUAL STRESSES; RESOLUTION; ROOTS; ROUGHNESS; STRAINS; SUBSTRATES; SURFACES; TENSILE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION