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Title: Influence of plasma-based in-situ surface cleaning procedures on HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As gate stack properties

We report on the influence of variations in the process parameters of an in-situ surface cleaning procedure, consisting of alternating cycles of nitrogen plasma and trimethylaluminum dosing, on the interface trap density of highly scaled HfO{sub 2} gate dielectrics deposited on n-In{sub 0.53}Ga{sub 0.47}As by atomic layer deposition. We discuss the interface chemistry of stacks resulting from the pre-deposition exposure to nitrogen plasma/trimethylaluminum cycles. Measurements of interface trap densities, interface chemistry, and surface morphology show that variations in the cleaning process have a large effect on nucleation and surface coverage, which in turn are crucial for achieving low interface state densities.
Authors:
; ; ; ;  [1]
  1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
Publication Date:
OSTI Identifier:
22217918
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 15; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIELECTRIC MATERIALS; GALLIUM ARSENIDES; HAFNIUM OXIDES; INTERFACES; MORPHOLOGY; NITROGEN; NUCLEATION; PLASMA; SEMICONDUCTOR MATERIALS; SURFACE CLEANING; SURFACES; TRAPS; VARIATIONS