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Title: In situ study of the role of substrate temperature during atomic layer deposition of HfO{sub 2} on InP

The dependence of the “self cleaning” effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO{sub 2} on various chemically treated and native oxide InP (100) substrates is investigated using in situ X-ray photoelectron spectroscopy. The removal of In-oxide is found to be more efficient at higher ALD temperatures. The P oxidation states on native oxide and acid etched samples are seen to change, with the total P-oxide concentration remaining constant, after 10 cycles of ALD HfO{sub 2} at different temperatures. An (NH{sub 4}){sub 2} S treatment is seen to effectively remove native oxides and passivate the InP surfaces independent of substrate temperature studied (200 °C, 250 °C and 300 °C) before and after the ALD process. Density functional theory modeling provides insight into the mechanism of the changes in the P-oxide chemical states.
Authors:
; ; ; ; ;  [1] ;  [2] ; ; ;  [1] ;  [3]
  1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)
  2. Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22217916
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 15; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL STATE; DENSITY FUNCTIONAL METHOD; ETCHING; HAFNIUM OXIDES; INDIUM PHOSPHIDES; OXIDATION; SIMULATION; SUBSTRATES; SURFACE CLEANING; SURFACES; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY