Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy

Journal Article · Mon Oct 14 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4826094· OSTI ID:22217907

Imura, M.; Tsuda, S.; Nagata, T.; Takeda, H.; Liao, M. Y.; Koide, Y. ^[1]; Yang, A. L.; Yamashita, Y.; Yoshikawa, H.; Kobayashi, K. ^[2]; Yamaguchi, T. ^[3]; Kaneko, M.; Uematsu, N.; Wang, K.; Araki, T. ^[4]; Nanishi, Y. ^[4]

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1. National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
2. NIMS/SPring-8, NIMS, 1-1-1 Koto, Sayo-cho, Sayo, Hyogo 679-5148 (Japan)
3. Faculty of Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiouji, Tokyo 192-0015 (Japan)
4. Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu 525-8577 (Japan)

The electronic structures of Mg-doped InN (Mg-InN) epilayers with the Mg concentration, [Mg], ranging from 1 × 10{sup 19} to 5 × 10{sup 19} cm{sup −3} were systematically investigated by soft and hard X-ray photoelectron spectroscopies. The angle-resolved results on the core-level and valence band photoelectron spectra as a function of [Mg] revealed that the energy band of Mg-InN showed downward bending due to the n{sup +} surface electron accumulation and p type layers formed in the bulk. With an increase in [Mg], the energy-band changed from monotonic to two-step n{sup +}p homojunction structures. The oxygen concentration rapidly increased at the middle-bulk region (∼4.5 to ∼7.5 nm) from the surface, which was one of the reasons of the transformation of two-step energy band.

• OSTI ID: 22217907
• Journal Information: Applied Physics Letters, Vol. 103, Issue 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
CONCENTRATION RATIO
DOPED MATERIALS
ELECTRONIC STRUCTURE
ELECTRONS
HARD X RADIATION
INDIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
OXYGEN
P-N JUNCTIONS
SEMICONDUCTOR MATERIALS
SURFACES
X-RAY PHOTOELECTRON SPECTROSCOPY