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Title: Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy

The electronic structures of Mg-doped InN (Mg-InN) epilayers with the Mg concentration, [Mg], ranging from 1 × 10{sup 19} to 5 × 10{sup 19} cm{sup −3} were systematically investigated by soft and hard X-ray photoelectron spectroscopies. The angle-resolved results on the core-level and valence band photoelectron spectra as a function of [Mg] revealed that the energy band of Mg-InN showed downward bending due to the n{sup +} surface electron accumulation and p type layers formed in the bulk. With an increase in [Mg], the energy-band changed from monotonic to two-step n{sup +}p homojunction structures. The oxygen concentration rapidly increased at the middle-bulk region (∼4.5 to ∼7.5 nm) from the surface, which was one of the reasons of the transformation of two-step energy band.
Authors:
; ; ; ; ;  [1] ; ; ; ;  [2] ;  [3] ;  [4] ; ; ; ;  [5] ;  [5] ;  [6]
  1. National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
  2. NIMS/SPring-8, NIMS, 1-1-1 Koto, Sayo-cho, Sayo, Hyogo 679-5148 (Japan)
  3. Faculty of Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiouji, Tokyo 192-0015 (Japan)
  4. (Japan)
  5. Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu 525-8577 (Japan)
  6. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22217907
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRONIC STRUCTURE; ELECTRONS; HARD X RADIATION; INDIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; OXYGEN; P-N JUNCTIONS; SEMICONDUCTOR MATERIALS; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY