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Title: Neutron irradiation effects on gallium nitride-based Schottky diodes

Depth-resolved cathodoluminescence spectroscopy (DRCLS), time-resolved surface photovoltage spectroscopy, X-ray photoemission spectroscopy (XPS), and current-voltage measurements together show that fast versus thermal neutrons differ strongly in their electronic and morphological effects on metal-GaN Schottky diodes. Fast and thermal neutrons introduce GaN displacement damage and native point defects, while thermal neutrons also drive metallurgical reactions at metal/GaN interfaces. Defect densities exhibit a threshold neutron fluence below which thermal neutrons preferentially heal versus create new native point defects. Scanning XPS and DRCLS reveal strong fluence- and metal-dependent electronic and chemical changes near the free surface and metal interfaces that impact diode properties.
Authors:
; ;  [1] ; ;  [2] ;  [3] ;  [1] ;  [4]
  1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States)
  2. Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  3. Departments of Electrical and Computer Engineering and Materials Science and Engineering, University of California, Santa Barbara, California 93106 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22217906
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CATHODOLUMINESCENCE; DENSITY; DEPTH; ELECTRIC POTENTIAL; GALLIUM NITRIDES; INTERFACES; IRRADIATION; METALS; NEUTRON FLUENCE; PHOTOEMISSION; POINT DEFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SURFACES; THERMAL NEUTRONS; TIME RESOLUTION; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY