Neutron irradiation effects on gallium nitride-based Schottky diodes

Journal Article · Mon Oct 14 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4826091· OSTI ID:22217906

Lin, Chung-Han; Katz, Evan J.; Zhang, Zhichun ^[1]; Qiu, Jie; Cao, Lei ^[2]; Mishra, Umesh K. ^[3]; Brillson, Leonard J. ^[1]

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1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States)
2. Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
3. Departments of Electrical and Computer Engineering and Materials Science and Engineering, University of California, Santa Barbara, California 93106 (United States)

Depth-resolved cathodoluminescence spectroscopy (DRCLS), time-resolved surface photovoltage spectroscopy, X-ray photoemission spectroscopy (XPS), and current-voltage measurements together show that fast versus thermal neutrons differ strongly in their electronic and morphological effects on metal-GaN Schottky diodes. Fast and thermal neutrons introduce GaN displacement damage and native point defects, while thermal neutrons also drive metallurgical reactions at metal/GaN interfaces. Defect densities exhibit a threshold neutron fluence below which thermal neutrons preferentially heal versus create new native point defects. Scanning XPS and DRCLS reveal strong fluence- and metal-dependent electronic and chemical changes near the free surface and metal interfaces that impact diode properties.

• OSTI ID: 22217906
• Journal Information: Applied Physics Letters, Vol. 103, Issue 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CATHODOLUMINESCENCE
DENSITY
DEPTH
ELECTRIC POTENTIAL
GALLIUM NITRIDES
INTERFACES
IRRADIATION
METALS
NEUTRON FLUENCE
PHOTOEMISSION
POINT DEFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
SURFACES
THERMAL NEUTRONS
TIME RESOLUTION
X RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY