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Title: Low temperature transport in p-doped InAs nanowires

We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.
Authors:
; ; ; ;  [1]
  1. Center for Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)
Publication Date:
OSTI Identifier:
22217905
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; BERYLLIUM; DOPED MATERIALS; ELECTRON MOBILITY; ELECTRONS; FABRICATION; HOLE MOBILITY; HOLES; INDIUM ARSENIDES; INTERFERENCE; LAYERS; MOLECULAR BEAM EPITAXY; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; STACKING FAULTS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K