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Title: Work function engineering of single layer graphene by irradiation-induced defects

We report the tuning of electrical properties of single layer graphene by α-beam irradiation. As the defect density increases upon irradiation, the surface potential of the graphene changes, as determined by Kelvin probe force microscopy and Raman spectroscopy studies. X-ray photoelectron spectroscopy studies indicate that the formation of C/O bonding is promoted as the dose of irradiation increases when at atmospheric conditions. Our results show that the surface potential of the graphene can be engineered by introducing atomic-scale defects via irradiation with high-energy particles.
Authors:
; ; ;  [1] ; ;  [2] ;  [3] ;  [2] ;  [4]
  1. Center for Nanomaterials and Chemical Reactions, Institute for Basic Science, and Graduate School of EEWS, KAIST, 373-1 Guseong Dong, Daejeon 305-701 (Korea, Republic of)
  2. Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720 (United States)
  3. Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)
  4. (United States)
Publication Date:
OSTI Identifier:
22217892
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 17; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; BEAMS; CRYSTAL DEFECTS; ELECTRICAL PROPERTIES; ENGINEERS; GRAPHENE; IRRADIATION; RAMAN SPECTRA; RAMAN SPECTROSCOPY; SURFACE POTENTIAL; WORK FUNCTIONS; X-RAY PHOTOELECTRON SPECTROSCOPY