Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers
Abstract
Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.
- Authors:
-
- Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)
- Publication Date:
- OSTI Identifier:
- 22217884
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 114; Journal Issue: 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CADMIUM TELLURIDES; CHARGE TRANSPORT; CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; P-N JUNCTIONS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SPACE CHARGE; SUBSTRATES; SUPERCONDUCTING JUNCTIONS; TRAPPING; TUNNEL EFFECT; VAPOR PHASE EPITAXY
Citation Formats
Niraula, M., Yasuda, K., Wajima, Y., Yamashita, H., Tsukamoto, Y., Suzuki, Y., Matsumoto, M., Takai, N., Tsukamoto, Y., and Agata, Y. Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers. United States: N. p., 2013.
Web. doi:10.1063/1.4828479.
Niraula, M., Yasuda, K., Wajima, Y., Yamashita, H., Tsukamoto, Y., Suzuki, Y., Matsumoto, M., Takai, N., Tsukamoto, Y., & Agata, Y. Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers. United States. https://doi.org/10.1063/1.4828479
Niraula, M., Yasuda, K., Wajima, Y., Yamashita, H., Tsukamoto, Y., Suzuki, Y., Matsumoto, M., Takai, N., Tsukamoto, Y., and Agata, Y. 2013.
"Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers". United States. https://doi.org/10.1063/1.4828479.
@article{osti_22217884,
title = {Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers},
author = {Niraula, M. and Yasuda, K. and Wajima, Y. and Yamashita, H. and Tsukamoto, Y. and Suzuki, Y. and Matsumoto, M. and Takai, N. and Tsukamoto, Y. and Agata, Y.},
abstractNote = {Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.},
doi = {10.1063/1.4828479},
url = {https://www.osti.gov/biblio/22217884},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 16,
volume = 114,
place = {United States},
year = {Mon Oct 28 00:00:00 EDT 2013},
month = {Mon Oct 28 00:00:00 EDT 2013}
}